LOW-TEMPERATURE ANOMALIES OF SPIN SUSCEPTIBILITY IN HEAVILY PHOSPHORUS DOPED SILICON

被引：33

作者：

IKEHATA, S

KOBAYASHI, S

机构：

[1] Univ of Tokyo, Dep of Physics,, Tokyo, Jpn, Univ of Tokyo, Dep of Physics, Tokyo, Jpn

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 56卷 / 07期

关键词：

D O I：

10.1016/0038-1098(85)90966-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：607 / 608

页数：2

共 11 条

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