MAGNETIZATION IN PHOSPHORUS DOPED SILICON

[1] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1492 - 1505

[2] MAGNETIC SUSCEPTIBILITY OF GERMANIUM [J]. PHYSICAL REVIEW, 1957, 108 (03): : 683 - 689

[3] MAGNETIC SUSCEPTIBILITY OF WEAKLY INTERACTING DONORS IN GERMANIUM [J]. PHYSICAL REVIEW, 1962, 127 (02): : 405 - &

[4] NMR-STUDY ON HEAVILY DOPED SILICON .2. [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 39 (06) : 1492 - 1497

[5] SPECIFIC-HEAT STUDY OF HEAVILY P-DOPED SI [J]. SOLID STATE COMMUNICATIONS, 1977, 24 (01) : 67 - 70

[6] MAGNETIC-FIELD DEPENDENCE OF THE SPECIFIC-HEAT OF HEAVILY PHOSPHORUS DOPED SILICON [J]. SOLID STATE COMMUNICATIONS, 1979, 32 (11) : 1147 - 1150

[7] NMR-STUDY ON ELECTRONIC STATES IN PHOSPHORUS DOPED SILICON [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 45 (04) : 1276 - 1281

[8] MOTT NF, 1973, METAL INSULATOR TRAN

[9] RELATIONSHIP BETWEEN RESISTIVITY AND PHOSPHORUS CONCENTRATION IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4576 - 4580

[10] ABSOLUTE SPIN SUSCEPTIBILITIES AND OTHER ESR PARAMETERS OF HEAVILY DOPED TYPE SILICON .1. METALLIC SAMPLES [J]. PHYSICAL REVIEW B, 1972, 5 (05): : 1716 - &

[1] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1492 - 1505

[2] MAGNETIC SUSCEPTIBILITY OF GERMANIUM [J]. PHYSICAL REVIEW, 1957, 108 (03): : 683 - 689

[3] MAGNETIC SUSCEPTIBILITY OF WEAKLY INTERACTING DONORS IN GERMANIUM [J]. PHYSICAL REVIEW, 1962, 127 (02): : 405 - &

[4] NMR-STUDY ON HEAVILY DOPED SILICON .2. [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 39 (06) : 1492 - 1497

[5] SPECIFIC-HEAT STUDY OF HEAVILY P-DOPED SI [J]. SOLID STATE COMMUNICATIONS, 1977, 24 (01) : 67 - 70

[6] MAGNETIC-FIELD DEPENDENCE OF THE SPECIFIC-HEAT OF HEAVILY PHOSPHORUS DOPED SILICON [J]. SOLID STATE COMMUNICATIONS, 1979, 32 (11) : 1147 - 1150

[7] NMR-STUDY ON ELECTRONIC STATES IN PHOSPHORUS DOPED SILICON [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 45 (04) : 1276 - 1281

[8] MOTT NF, 1973, METAL INSULATOR TRAN

[9] RELATIONSHIP BETWEEN RESISTIVITY AND PHOSPHORUS CONCENTRATION IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4576 - 4580

[10] ABSOLUTE SPIN SUSCEPTIBILITIES AND OTHER ESR PARAMETERS OF HEAVILY DOPED TYPE SILICON .1. METALLIC SAMPLES [J]. PHYSICAL REVIEW B, 1972, 5 (05): : 1716 - &