Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance

Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group approach. We show that the result can be recovered by a simple modification of the conventional Poisson's equation approach used in semiconductor heterojunctions. A novel mechanism of colossal electroresistance is proposed, which incorporates the hysteretic behavior of the transition in higher dimensions.