Observation of Poole-Frenkel effect saturation in SiO2 and other insulating films

被引：115

作者：

Harrell, WR ^{[1
]}

Frey, J

机构：

[1] Clemson Univ, Dept Elect & Comp Engn, Clemson, SC 29634 USA

[2] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA

来源：

THIN SOLID FILMS | 1999年 / 352卷 / 1-2期

关键词：

conductivity; dielectrics; silicon nitride; silicon oxide;

D O I：

10.1016/S0040-6090(99)00344-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An experimental method for observing the saturation of the Poole-Frenkel (PF) effect in insulating films is developed, allowing observation of this theoretically predicted effect for the first time. This method is also applied to measure the ionization potential of Coulombic attractive traps in SiO2 films. New insights into the temperature variation of the PF effect shed light on the range of validity of the classical model of Frenkel. These methods and insights are general and can be applied to many insulating films, particularly those with leakage currents dominated by field-enhanced thermal emission. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：195 / 204

页数：10

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