Epitaxial growth of Y2O3:Eu thin films on LaAlO3

被引：24

作者：

Gao, HJ

Kumar, D

Cho, KG

Holloway, PH

Singh, RK

Fan, XD

Yan, Y

Pennycook, SJ

机构：

[1] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 15期

关键词：

D O I：

10.1063/1.124971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the epitaxial growth of europium-activated yttrium oxide (Y2O3:Eu) (001) thin films on LaAlO3 (001) using laser ablation deposition at a substrate temperature of 775 degrees C and 10 Hz pulse repetition rate. The orientation relationship between the films and the substrates is [110]Y(2)O(3)parallel to[100]LaAlO3 and [-110]Y(2)O(3)parallel to[010]LaAlO3 which results in a lattice mismatch of only 0.8%. Transmission electron microscopy (TEM) of the films reveals the single crystalline Y2O3:Eu thin film to contain small pores. Scanning transmission electron microscopy (STEM) imaging of the films shows the substrate always terminates with the Al sublattice. Moreover, the STEM reveals that no precipitates of Eu had formed in the films. (C) 1999 American Institute of Physics. [S0003-6951(99)05441-8].

引用

页码：2223 / 2225

页数：3

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