35-GHz intrinsic bandwidth for direct modulation in 1.3-μm semiconductor lasers subject to strong injection locking

被引：99

作者：

Hwang, SK

Liu, JM ^{[1
]}

White, JK

机构：

[1] Natl Chung Cheng Univ, Grad Inst Optomech, Chiayi, Taiwan

[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 04期

关键词：

direct modulation; injection locking; modulation bandwidth; optical communications; semiconductor lasers;

D O I：

10.1109/LPT.2004.824627

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Significant enhancement in modulation bandwidth of semiconductor lasers subject to strong optical injection is experimentally and theoretically studied. At least two folds of improvement is achieved under study. By using an optical probing method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is observed in the injection-locked laser system, The achieved bandwidth approaches the maximum modulation bandwidth set by the K factor for the free-running laser. Discussions are presented for an even larger modulation bandwidth using the injection-locking technique.

引用

页码：972 / 974

页数：3

共 9 条

[1] 30GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 mu m wavelength [J].