Electron barrier height at CuxTe1-x/Al2O3 interfaces of conducting bridge memory stacks

被引：6

作者：

Afanas'ev, V. V. ^{[1
]}

De Stefano, F. ^{[1
]}

Houssa, M. ^{[1
]}

Stesmans, A. ^{[1
]}

Goux, L. ^{[2
]}

Opsomer, K. ^{[2
]}

Detavernier, C. ^{[3
]}

Kittl, J. A. ^{[2
]}

Jurczak, M. ^{[2
]}

机构：

[1] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium

[2] IMEC, B-3001 Louvain, Belgium

[3] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium

来源：

THIN SOLID FILMS | 2013年 / 533卷

关键词：

Internal photoemission; Interface barrier; Polarization layer; Conducting bridge cells;

D O I：

10.1016/j.tsf.2012.10.106

中图分类号：

T [工业技术];

学科分类号：

120111 [工业工程];

摘要：

We addressed the possible variation of the electron barrier at the Cu0.6Te0.4/Al2O3 interface as compared to the pure Cu electrode case. The experiments were performed using structures fabricated by atomic layer deposition of an Al2O3 insulator on (100) Si or thermally oxidized (100) Si, followed by sputtering of Cu or Cu0.6Te0.4 top electrodes. These structures were used to observe electron photoemission from the metal layer into the oxide in order to determine the energy barrier for electrons between the Fermi level of the metal and the conduction band of the insulating layer. The electron barrier height at interfaces of Cu and Cu0.6Te0.4 electrodes is found to be the same but appears to be sensitive to the oxide type which is ascribed to the formation of a polarization layer. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：34 / 37

页数：4

共 15 条

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