Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

被引：94

作者：

Goux, L. ^{[1
]}

Opsomer, K. ^{[1
]}

Degraeve, R. ^{[1
]}

Muller, R. ^{[1
]}

Detavernier, C. ^{[2
]}

Wouters, D. J. ^{[1
]}

Jurczak, M. ^{[1
]}

Altimime, L. ^{[1
]}

Kittl, J. A. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Univ Ghent, B-9000 Ghent, Belgium

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 05期

关键词：

D O I：

10.1063/1.3621835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we explore the influence of the CuxTe1-x layer composition (0.2 < x < 0.8) on the resistive switching of CuxTe1-x/Al2O3/Si cells. While x > 0.7 leads to large reset power, similar to pure-Cu electrodes, x < 0.3 results in volatile forming properties. The intermediate range 0.5< x < 0.7 shows optimum memory properties, featuring improved control of filament programming using <5 mu A as well as state stability at 85 degrees C. The composition-dependent programming control and filament stability are closely associated with the phases in the CuxTe1-x layer and are explained as related to the chemical affinity between Cu and Te. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3621835]

引用

页数：3

共 12 条

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