Improvement of Resistive Switching Properties in ZrO2-Based ReRAM With Implanted Ti Ions

被引：197

作者：

Liu, Qi ^{[1
,2
]}

Long, Shibing ^{[1
]}

Wang, Wei ^{[3
]}

Zuo, Qingyun ^{[1
]}

Zhang, Sen ^{[1
]}

Chen, Junning ^{[2
]}

Liu, Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Nanofabricat & Novel Devices Integrated T, Inst Microelect, Beijing 100029, Peoples R China

[2] Anhui Univ, Coll Elect & Technol, Hefei 230039, Peoples R China

[3] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 12期

关键词：

Conductive filament; oxygen vacancy; resistive random access memory (ReRAM); Ti doping impurities; ZrO2; DOPED ZRO2; LOW-POWER; MEMORY; OXIDE;

D O I：

10.1109/LED.2009.2032566

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the resistive switching properties of a ZrO2-based memory film with implanted Ti ions are investigated. The testing results demonstrate that doping Ti in ZrO2 can remove the electroforming process and reduce the variations of switching parameters such as Set voltage and resistance in OFF state. Furthermore, the Ti-doped ZrO2 resistive switching memory also exhibits high device yield (nearly 100%), low operating voltage, fast speed, large on/off ratio (> 10(4)), and long retention time (> 10(7) s). The formation and rupture of conducting filaments are suggested to be responsible for the resistive switching phenomenon. The doped Ti impurities can improve the formation of conducting filaments and switching behaviors.

引用

页码：1335 / 1337

页数：3

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