Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory

被引：487

作者：

Janousch, Markus ^{[1
]}

Meijer, G. Ingmar

Staub, Urs

Delley, Bernard

Karg, Siegfried F.

Andreasson, Bjorn P.

机构：

[1] Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland

[2] IBM Corp, Zurich Res Lab, Res, CH-8803 Ruschlikon, Switzerland

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 17期

关键词：

D O I：

10.1002/adma.200602915

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Transition metal oxides exhibiting a bistable resistance state are attractive for nonvolatile memory applications. The relevance of oxygen vacancies for the resistance-change memory is investigated by X-ray fluorescence (see figure), infrared microscopy, and X-ray absorption spectroscopy using Cr-doped SrTiO3 as an example. The microscopic origin of resistance switching in this class of materials may be due to an oxygen-vacancy drift occurring in close proximity to one of the electrodes.

引用

页码：2232 / +

页数：5

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