Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells

被引：60

作者：

Goux, Ludovic ^{[1
]}

Lisoni, Judit G. ^{[1
]}

Wang, Xin Peng ^{[1
]}

Jurczak, Malgorzata ^{[1
]}

Wouters, Dirk J. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 10期

关键词：

Integration; NiO memory; reset current; scaling; FILMS;

D O I：

10.1109/TED.2009.2028378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief, we integrate oxygen-deficient NiO cells in 80-nm-wide contact holes using complementary metal-oxide-semiconductor-compatible Ni electrodes. Ni/NiO/Ni memory-cell arrays are forming free, and can be operated using very low reset current (< 50 mu A) and switching voltage (< 1 V). In contrast to metallic-type filaments formed at high-power switching, low-power switching involves high-resistance semiconducting filaments, probably consisting of oxygen-vacancy-rich paths. Retention tests carried out at 150 degrees C indicated excellent stability of both the high-and low-power set states. Drastic reduction of reset current is also demonstrated for single-contact cells with TiN top electrodes.

引用

页码：2363 / 2368

页数：6

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