Electronic transport and consequences for material removal in ultrafast pulsed laser ablation of materials

被引:195
作者
Bulgakova, NM
Stoian, R
Rosenfeld, A
Hertel, IV
Campbell, EEB
机构
[1] Max Born Inst Nichtlineare Opt & Kurzzeitspektros, D-12489 Berlin, Germany
[2] Russian Acad Sci, Inst Thermophys, SB, Novosibirsk 630090, Russia
[3] Univ Gothenburg, Dept Expt Phys, SE-41296 Gothenburg, Sweden
[4] Chalmers Univ Technol, SE-41296 Gothenburg, Sweden
[5] Natl Inst Laser Plasma & Radiat Phys, Bucharest, Romania
关键词
D O I
10.1103/PhysRevB.69.054102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Fast electronic transport is investigated theoretically based on a drift-diffusion approach for different classes of materials (metals, semiconductors, and dielectrics) under ultrafast, pulsed laser irradiation. The simulations are performed at intensities above the material removal threshold, characteristic for the ablation regime. The laser-induced charging of dielectric surfaces causes a subpicosecond electrostatic rupture of the superficial layers, an effect which, in comparison, is strongly inhibited for metals and semiconductors as a consequence of superior carrier transport properties.
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页数:12
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共 77 条
[1]  
Anisimov S. I., 1974, SOV PHYS JETP, V39, P375, DOI DOI 10.1016/J.JMATPROTEC.2009.05.031
[2]  
[Anonymous], 1984, OPTICAL CONSTANTS NA
[3]  
[Anonymous], 1994, The Optical Constants of Bulk Materials and Films
[4]  
[Anonymous], 1993, ELECT PROPERTIES MAT
[5]   Modeling of laser-induced breakdown in dielectrics with subpicosecond pulses [J].
Apostolova, T ;
Hahn, Y .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (02) :1024-1034
[6]   THEORY OF LASER-INDUCED FREE-ELECTRON HEATING AND IMPACT IONIZATION IN WIDE-BAND-GAP SOLIDS [J].
ARNOLD, D ;
CARTIER, E .
PHYSICAL REVIEW B, 1992, 46 (23) :15102-15115
[7]   Single and multiple ultrashort laser pulse ablation threshold of Al2O3 (corundum) at different etch phases [J].
Ashkenasi, D ;
Stoian, R ;
Rosenfeld, A .
APPLIED SURFACE SCIENCE, 2000, 154 :40-46
[8]   2-PHOTON PHOTOEMISSION FROM METALS INDUCED BY PICOSECOND LASER-PULSES [J].
BECHTEL, JH ;
SMITH, WL ;
BLOEMBERGEN, N .
PHYSICAL REVIEW B, 1977, 15 (10) :4557-4563
[9]  
BERGLUND CN, 1964, PHYS REV A-GEN PHYS, V136, P1030
[10]   COMMENT ON THE EVIDENCE FOR A SELF-CONFINED PLASMA IN LASER ANNEALING [J].
BOK, J ;
COMBESCOT, M .
PHYSICAL REVIEW LETTERS, 1981, 47 (21) :1564-1564