Thickness and grain size dependent mechanical properties of Cu films studied by nanoindentation tests
被引:41
作者:
Cao, Z. H.
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Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Cao, Z. H.
[1
,2
]
Li, P. Y.
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Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Li, P. Y.
[1
,2
]
Lu, H. M.
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Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Lu, H. M.
[1
,2
]
Huang, Y. L.
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Xiangtan Univ, Fac Mat & Photoelect Phys, Xiangtan 411105, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Huang, Y. L.
[3
]
Meng, X. K.
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Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Meng, X. K.
[1
,2
]
机构:
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China
[3] Xiangtan Univ, Fac Mat & Photoelect Phys, Xiangtan 411105, Peoples R China
The hardness and the elastic modulus of Cu films with thickness (t) and grain size (d) have been investigated by nanoindentation tests. The d and the indentation depth increase linearly with the increase in t. The hardness rises with the decrease in t, whereas the elastic modulus is independent of t and it is about 20% less than conventional coarse-grained Cu. The enhanced hardness is attributed to the smaller d and the indentation depth. The analysis of load-displacement curves indicates that the scope of the critical shear stress for different thick Cu films ranges from 3.2 to 4.1 GPa, which is similar to the theoretical shear stress of single crystalline Cu. The present results are explained by the dislocation mediated mechanism even if d reaches about 16.4 nm for the Cu film with t = 180 nm.
机构:
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, SYNL, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, SYNL, Shenyang 110016, Peoples R China
Chen, J
;
Lu, L
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Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, SYNL, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, SYNL, Shenyang 110016, Peoples R China
Lu, L
;
Lu, K
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Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, SYNL, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, SYNL, Shenyang 110016, Peoples R China
机构:
Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Chen, J
;
Wang, W
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Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Wang, W
;
Qian, LH
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Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Qian, LH
;
Lu, K
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Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
机构:
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, SYNL, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, SYNL, Shenyang 110016, Peoples R China
Chen, J
;
Lu, L
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机构:
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, SYNL, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, SYNL, Shenyang 110016, Peoples R China
Lu, L
;
Lu, K
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机构:
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, SYNL, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, SYNL, Shenyang 110016, Peoples R China
机构:
Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Chen, J
;
Wang, W
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机构:
Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Wang, W
;
Qian, LH
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机构:
Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Qian, LH
;
Lu, K
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机构:
Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China