1.17-μm highly strained GaInAs-GaAs quantum-well laser

被引：68

作者：

Schlenker, D ^{[1
]}

Miyamoto, T ^{[1
]}

Chen, Z ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 08期

基金：

日本学术振兴会;

关键词：

characteristic temperature; GaInAs-GaAs quantum well; semiconductor laser; strain;

D O I：

10.1109/68.775308

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Excellent lasing properties and temperature characteristic of a highly strained 1.17-mu m GaInAs-GaAs double-quantum-well laser are reported. We show that a strained buffer layer, which is employed in the device, has no tradeoff on the device performance. For a 1500-mu m-long laser with cleaved facets a threshold current density of 200 A/cm(2) is achieved. A transparency current density of 180 A/cm(2) is estimated for as cleaved devices. A record high characteristic temperature in this wavelength range of 150 K is achieved.

引用

页码：946 / 948

页数：3

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