GaAsSb:: A novel material for 1.3μm VCSELs

被引：83

作者：

Anan, T

Nishi, K

Sugou, S

Yamada, M

Tokutome, K

Gomyo, A

机构：

[1] RWCP, Opt Interconnect NEC Lab, Ibaraki 3058501, Japan

[2] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Ibaraki 3058501, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 22期

关键词：

D O I：

10.1049/el:19981451

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAsSb quantum wells (QWs) on GaAs substrate are proposed for the active layer of 1.3 mu m VCSELs. High-quality GaAsSb QWs showed intense 1.32 mu n photoluminescence at room temperature. Room-temperature pulsed operation of GaAsSb/GaAs broad stripe laser diodes at a wavelength of 1.22 mu m was demonstrated for the first time.

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收藏

页码：2127 / 2129

页数：3

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