REALIZATION AND MODELING OF A PSEUDOMORPHIC (GAAS1-XSBX-INYGA1-YAS)/GAAS BILAYER-QUANTUM WELL

被引：77

作者：

PETER, M ^{[1
]}

WINKLER, K ^{[1
]}

MAIER, M ^{[1
]}

HERRES, N ^{[1
]}

WAGNER, J ^{[1
]}

FEKETE, D ^{[1
]}

BACHEM, KH ^{[1
]}

RICHARDS, D ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 18期

关键词：

D O I：

10.1063/1.114321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have realized a (GaAs1-xSbx-InyGa1-yAs)/GaAs bilayer-quantum well (BQW), which consists of two adjacent pseudomorphic layers of GaAs1-xSbx and InyGa1-yAs sandwiched between GaAs barriers. Photoluminescence was observed at longer wavelengths than those found for corresponding InyGa1-yAs/GaAs and GaAs1-xSbx/GaAs single quantum wells (SQW), which indicates a type-II band alignment in the BQW. The longest 300 K emission wavelength achieved so far was 1.332 mu m. For an accurate determination of the band offset between GaAs1-xSbx and GaAs, required for a theoretical modeling of the interband transition energies of these BQWs, a large set of GaAs1-xSbx/GaAs SQWs was prepared from which a type-II band alignment was deduced, with the valence band discontinuity ratio Q(v) found to depend on the Sb concentration x (Q(v) = 1.76 +/- 1.34 x). With this parameter it was possible to calculate the expected interband transition energies in a BQW structure without any adjustable parameters. The calculations are in agreement with experimental data within a range of +/-4%. (C) 1995 American Institute of Physics.

引用

页码：2639 / 2641

页数：3

共 18 条

[1] STRAIN EFFECTS AND BAND OFFSETS IN GAAS/INGAAS STRAINED LAYERED QUANTUM STRUCTURES [J].