EVIDENCE OF TYPE-I BAND OFFSETS IN STRAINED GAAS1-XSBX/GAAS QUANTUM-WELLS FROM HIGH-PRESSURE PHOTOLUMINESCENCE

被引:45
作者
PRINS, AD [1 ]
DUNSTAN, DJ [1 ]
LAMBKIN, JD [1 ]
OREILLY, EP [1 ]
ADAMS, AR [1 ]
PRITCHARD, R [1 ]
TRUSCOTT, WS [1 ]
SINGER, KE [1 ]
机构
[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,MANCHESTER M60 1QD,LANCS,ENGLAND
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 04期
关键词
D O I
10.1103/PhysRevB.47.2191
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have used high-pressure photoluminescence in a diamond anvil cell to investigate the band offsets between strained GaAs1-xSbx and unstrained GaAs for x = 0.12. It has generally been expected that this system should display a strongly type-II band lineup, with holes confined in deep GaAs1-xSbx wells and the lowest-energy electron states in GaAs. Our results on a multiple-quantum-well sample show that this is not the case. We measure the photoluminescence transition energies up to and beyond the GAMMA-X crossover near 36 kbar, where the luminescence becomes indirect. The character of the GAMMA-X crossover dependence on well width requires a type-I offset for the X minimum and suggests a type-I offset for the GAMMA minimum of the conduction band. This is in good agreement with theory when the strong band-gap bowing in the GaAs1-xSbx alloy system is properly taken into account.
引用
收藏
页码:2191 / 2196
页数:6
相关论文
共 22 条
[1]   PRESSURE-DEPENDENCE OF BAND OFFSETS IN AN INAS-GASB SUPERLATTICE [J].
CLAESSEN, LM ;
MAAN, JC ;
ALTARELLI, M ;
WYDER, P ;
CHANG, LL ;
ESAKI, L .
PHYSICAL REVIEW LETTERS, 1986, 57 (20) :2556-2559
[2]   A CRITICAL-REVIEW OF HETEROJUNCTION BAND OFFSETS [J].
DUGGAN, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1224-1230
[3]  
HAQ S, 1989, INST PHYS CONF SER, V100, P337
[4]   PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS [J].
HOU, HQ ;
WANG, LJ ;
TANG, RM ;
ZHOU, JM .
PHYSICAL REVIEW B, 1990, 42 (05) :2926-2931
[5]   BAND LINEUP IN GAAS1-CHI-SB-CHI-GAAS STRAINED-LAYER MULTIPLE QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].
JI, G ;
AGARWALA, S ;
HUANG, D ;
CHYI, J ;
MORKOC, H .
PHYSICAL REVIEW B, 1988, 38 (15) :10571-10577
[6]  
LAMBKIN JD, 1988, SOLID STATE COMMUN, V67, P627
[7]  
Madelung O., 1991, DATA SCI TECHNOLOGY
[8]   DETERMINATION OF VALENCE-BAND EFFECTIVE-MASS ANISOTROPY IN GAAS QUANTUM WELLS BY OPTICAL SPECTROSCOPY [J].
MOLENKAMP, LW ;
EPPENGA, R ;
THOOFT, GW ;
DAWSON, P ;
FOXON, CT ;
MOORE, KJ .
PHYSICAL REVIEW B, 1988, 38 (06) :4314-4317
[9]   GROWTH AND PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS1-XSBX [J].
NAHORY, RE ;
POLLACK, MA ;
DEWINTER, JC ;
WILLIAMS, KM .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1607-1614
[10]  
NOAK RA, 1978, SOLID STATE COMMUN, V28, P177