BAND LINEUP IN GAAS1-CHI-SB-CHI-GAAS STRAINED-LAYER MULTIPLE QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：59

作者：

JI, G

AGARWALA, S

HUANG, D

CHYI, J

MORKOC, H

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.38.10571

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10571 / 10577

页数：7

共 13 条

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