GAAS/GAAS1-YSBY STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：9

作者：

KLEM, J

PENG, CK

HENDERSON, T

MORKOC, H

OTSUKA, N

CHOI, C

YU, PW

机构：

[1] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907

[2] WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 08期

关键词：

D O I：

10.1063/1.95965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：885 / 887

页数：3

共 14 条

[1] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].

CHANG, CA ;

LUDEKE, R ;

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :759-761

[2] ELECTRONIC-PROPERTIES OF INAS-GASB SUPER-LATTICES [J].

CHANG, LL ;

ESAKI, L .

SURFACE SCIENCE, 1980, 98 (1-3) :70-89

[3] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS0.5SB0.5 [J].

CHERNG, MJ ;

STRINGFELLOW, GG ;

COHEN, RM .

APPLIED PHYSICS LETTERS, 1984, 44 (07) :677-679

[4] MOLECULAR-BEAM EPITAXY OF GASB0.5AS0.5 AND ALXGA1-XSBYAS1-Y LATTICE MATCHED TO INP [J].

CHIU, TH ;

TSANG, WT ;

CHU, SNG ;

SHAH, J ;

DITZENBERGER, JA .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :408-410

[5]

FRITZ IJ, 1982, I PHYS C SER, V65, P241

[6]

GOLDSTEIN L, 1982, J PHYS PARIS C, V5, P201

[7] DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J].

HORNSTRA, J ;

BARTELS, WJ .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :513-517

[8] GAAS/GAAS1-YSBY SUPERLATTICE LIGHT-EMITTING-DIODES [J].

KLEM, J ;

FISCHER, R ;

MASSELINK, WT ;

KOPP, W ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3843-3845

[9]

MATTHEWS JW, 1974, J CRYST GROWTH, V27, P1187

[10] GROWTH AND PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS1-XSBX [J].

NAHORY, RE ;

POLLACK, MA ;

DEWINTER, JC ;

WILLIAMS, KM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1607-1614

← 1 2 →