CdZnTe pixel array detectors and implications for producing large volume gamma-ray spectrometers

被引：16

作者：

Brunett, BA ^{[1
]}

Van Scyoc, JM

James, RB

Schlesinger, TE

机构：

[1] Sandia Natl Labs, Livermore, CA 94550 USA

[2] Carnegie Mellon Univ, Pittsburgh, PA 15213 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 07期

关键词：

D O I：

10.1063/1.371309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this article we show that the behavior of new devices fabricated from horizontal Bridgman CdZnTe reported recently can be explained by the same conventional electrostatics arguments used to analyze detectors made from high pressure Bridgman material, and no qualitative differences in the material or contacts are necessary to explain the behavior of these new devices. Our work is an extension of the results obtained with a similar device geometry fabricated on high pressure Bridgman material. In addition we discuss the possibility of extending the design concepts learned here to fabricate large volume spectrometers based on a pixel array design. (C) 1999 American Institute of Physics. [S0021-8979(99)05419-5].

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收藏

页码：3926 / 3933

页数：8

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