Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots

被引：104

作者：

Bretagnon, T

Lefebvre, P

Valvin, P

Bardoux, R

Guillet, T

Taliercio, T

Gil, B

Grandjean, N

Semond, F

Damilano, B

Dussaigne, A

Massies, J

机构：

[1] Univ Montpellier 2, CNRS, Etud Semicond Grp, F-34095 Montpellier 5, France

[2] CNRS, Ctr Rech Hetero Epitaxie & Appl, F-06560 Valbonne, France

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.73.113304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Wurtzite GaN/AlN quantum dots (QDs) are studied by time-resolved photoluminescence. Careful measurements allow us to reach the regime of a single electron-hole pair per dot, evidenced by a monoexponential decay of the luminescence and a stop of the time-dependent shift of the emission energy. The transition energy and the radiative lifetime of the QD ground state are measured in the absence of any electric field screening effect, for a wide range of QD heights. These results are analyzed within an envelope function model for the electron and hole confinement. The effective electric field, averaged over the strain distribution in the dots, is determined to be of 9.0 +/- 0.5 MV/cm.

引用

收藏

页数：4

相关论文

共 26 条

[1] Growth and optical properties of GaN/AlN quantum wells [J].

Adelmann, C ;

Sarigiannidou, E ;

Jalabert, D ;

Hori, Y ;

Rouvière, JL ;

Daudin, B ;

Fanget, S ;

Bru-Chevallier, C ;

Shibata, T ;

Tanaka, M .

APPLIED PHYSICS LETTERS, 2003, 82 (23) :4154-4156

[2] Theory of the electronic structure of GaN/AIN hexagonal quantum dots [J].

Andreev, AD ;

O'Reilly, EP .

PHYSICAL REVIEW B, 2000, 62 (23) :15851-15870

[3] Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots [J].

Andreev, AD ;

O'Reilly, EP .

APPLIED PHYSICS LETTERS, 2001, 79 (04) :521-523

[4] Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy [J].

Arlery, M ;

Rouvière, JL ;

Widmann, F ;

Daudin, B ;

Feuillet, G ;

Mariette, H .

APPLIED PHYSICS LETTERS, 1999, 74 (22) :3287-3289

[5] Dynamics and polarization of group-III nitride lattices:: A first-principles study [J].

Bechstedt, F ;

Grossner, U ;

Furthmüller, J .

PHYSICAL REVIEW B, 2000, 62 (12) :8003-8011

[6] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[7]

Bigenwald P, 1999, PHYS STATUS SOLIDI B, V216, P371, DOI 10.1002/(SICI)1521-3951(199911)216:1<371::AID-PSSB371>3.0.CO

[8]

2-S

[9] Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation [J].

Bretagnon, T ;

Kalliakos, S ;

Lefebvre, P ;

Valvin, P ;

Gil, B ;

Grandjean, N ;

Dussaigne, A ;

Damilano, B ;

Massies, J .

PHYSICAL REVIEW B, 2003, 68 (20)

[10] From visible to white light emission by GaN quantum dots on Si(111) substrate [J].

Damilano, B ;

Grandjean, N ;

Semond, F ;

Massies, J ;

Leroux, M .

APPLIED PHYSICS LETTERS, 1999, 75 (07) :962-964