4 Gbit/in.(2) inductive write heads using high moment FeAlN poles

被引:30
作者
Jayasekara, WP
Wang, S
Kryder, MH
机构
[1] Data Storage Systems Center, Carnegie Mellon University, Pittsburgh
关键词
D O I
10.1063/1.362160
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin film inductive write heads incorporating 2-mu m-thick single and multilayer FeAlN/SiO2 poles were fabricated. The poles were trimmed to 1 mu m trackwidth using focused ion beam etching from the air bearing surface of the sliders. Tests on 2950 Oe media show satisfactory media saturation. Overwrite in excess of -43 dB and hard transition peak shift <2 nm were measured for wide trackwidth heads with 0.2 mu m gap lengths. Tracks written using a 1 mu m track width head were imaged using magnetic force microscopy, showing well defined transitions at linear densities up to 6500 flux changes per millimeter. A written track width of approximately 1.1 mu m and a side erase band of less than 0.1 mu m were observed. Assuming a coding scheme with a density ratio of 1.33, these heads promise a recording density of over 4 Gbit/in.(2) (C) 1996 American Institute of Physics.
引用
收藏
页码:5880 / 5882
页数:3
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