Microscopic analysis of the laser-induced femtosecond graphitization of diamond

被引：99

作者：

Jeschke, HO ^{[1
]}

Garcia, ME ^{[1
]}

Bennemann, KH ^{[1
]}

机构：

[1] Free Univ Berlin, Inst Theoret Phys, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.60.R3701

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a theoretical study of ultrafast phase transitions induced by femtosecond laser pulses of arbitrary form. Molecular-dynamics simulations on time dependent potential-energy surfaces derived from a microscopic Hamiltonian are performed. Applying this method to diamond, we show that a nonequilibrium transition to graphite takes place for a wide range of laser pulse durations and intensities. This ultrafast transition (similar to 100 fs) is driven by the suppression of the diamond minimum in the potential-energy surface of the laser excited system. [S0163-1829(99)50730-3].

引用

页码：R3701 / R3704

页数：4

共 20 条

[11] ULTRAFAST ELECTRONIC DISORDERING DURING FEMTOSECOND LASER MELTING OF GAAS [J].

SAETA, P ;

WANG, JK ;

SIEGAL, Y ;

BLOEMBERGEN, N ;

MAZUR, E .

PHYSICAL REVIEW LETTERS, 1991, 67 (08) :1023-1026

[12] Phase transformations of an InSb surface induced by strong femtosecond laser pulses [J].

Shumay, IL ;

Hofer, U .

PHYSICAL REVIEW B, 1996, 53 (23) :15878-15884

[13] Ab initio molecular dynamics simulation of laser melting of silicon [J].

Silvestrelli, PL ;

Alavi, A ;

Parrinello, M ;

Frenkel, D .

PHYSICAL REVIEW LETTERS, 1996, 77 (15) :3149-3152

[14] Dynamics of ultrafast phase changes in amorphous GeSb films [J].

Sokolowski-Tinten, K ;

Solis, J ;

Bialkowski, J ;

Siegel, J ;

Afonso, CN ;

von der Linde, D .

PHYSICAL REVIEW LETTERS, 1998, 81 (17) :3679-3682

[15] ULTRAFAST LASER-INDUCED ORDER-DISORDER TRANSITIONS IN SEMICONDUCTORS [J].

SOKOLOWSKITINTEN, K ;

BIALKOWSKI, J ;

VONDERLINDE, D .

PHYSICAL REVIEW B, 1995, 51 (20) :14186-14198

[16] Existence of electronic excitation enhanced crystallization in GeSb amorphous thin films upon ultrashort laser pulse irradiation [J].

Solis, J ;

Afonso, CN ;

Hyde, SCW ;

Barry, NP ;

French, PMW .

PHYSICAL REVIEW LETTERS, 1996, 76 (14) :2519-2522

[17] THEORY FOR THE INSTABILITY OF THE DIAMOND STRUCTURE OF SI, GE, AND C INDUCED BY A DENSE ELECTRON-HOLE PLASMA [J].

STAMPFLI, P ;

BENNEMANN, KH .

PHYSICAL REVIEW B, 1990, 42 (11) :7163-7173

[18] TIME-DEPENDENCE OF THE LASER-INDUCED FEMTOSECOND LATTICE INSTABILITY OF SI AND GAAS - ROLE OF LONGITUDINAL OPTICAL DISTORTIONS [J].

STAMPFLI, P ;

BENNEMANN, KH .

PHYSICAL REVIEW B, 1994, 49 (11) :7299-7305

[19] TIME-RESOLVED STUDY OF LASER-INDUCED DISORDER OF SI SURFACES [J].

TOM, HWK ;

AUMILLER, GD ;

BRITOCRUZ, CH .

PHYSICAL REVIEW LETTERS, 1988, 60 (14) :1438-1441

[20] A TRANSFERABLE TIGHT-BINDING POTENTIAL FOR CARBON [J].

XU, CH ;

WANG, CZ ;

CHAN, CT ;

HO, KM .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (28) :6047-6054

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