Formation and characteristics of undoped and doped tetrahedral amorphous carbon films

被引:7
作者
Chen, D [1 ]
Wei, A
Wong, SP
Peng, S
机构
[1] Zhongshan Univ, Dept Phys, Guangzhou S10275, Peoples R China
[2] Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Peoples R China
关键词
doping; infra-red spectroscopy; optical absorption; tetrahedral amorphous carbon;
D O I
10.1016/S0925-9635(99)00101-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Synthesis of undoped and doped tetrahedral amorphous carbon (ta-C) films has been achieved using magnetic field filtered plasma stream system in an ambient gas of pure Ar and Ar with N-2, respectively. The optical and electrical properties of these films as a function of the substrate bias voltages (V-b) or nitrogen partial pressures (P-N) have been studied using UV-visible optical absorption spectroscopy, Fourier-transform infra-red spectroscopy (FTIR) and measurements of electrical conductivity. The results show that ta-C films with a high sp(3) fraction were formed when the V-b was in the range of -10 to -50 V. The optical band gap of such ta-C films was found to be larger than 3 eV. The incorporation of nitrogen into the ta-C films deposited at low P-N (P-N<25%), results in a slight drop in activation energy, which indicates that there is evidently some doping effect of nitrogen. The configurations of N atoms in ta-C network are identified and discussed. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
引用
收藏
页码:1130 / 1134
页数:5
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