Controlled polarization switching in VCSELs by means of asymmetric current injection

被引：31

作者：

Augustin, LM

Smalbrugge, E

Choquette, KD

Karouta, F

Strijbos, RC

Verschaffelt, G

Geluk, EJ

van de Roer, TG

Thienpont, H

机构：

[1] Eindhoven Univ Technol, COBRA Interuniv Res Inst, Grp Optoelect Devices EH8, NL-5600 MB Eindhoven, Netherlands

[2] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[3] Free Univ Brussels, B-1050 Brussels, Belgium

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 03期

关键词：

asymmetric current injection; distributed feedback lasers; GaAs; intracavity contacts; polarization control; polarization switching; semiconductor lasers;

D O I：

10.1109/LPT.2004.823693

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the potential of asymmetric current injection for polarization switching in GaAs-based intracavity contacted vertical-cavity surface-emitting lasers using two sets of p- and n-type contacts per device. When using the contacts aligned along the [1101 crystal direction, the observed laser polarization is parallel to [1101, whereas, using the contacts along the [1101 crystal direction, the polarization of the laser emission switches to a direction making an angle of 25degrees-90 towards [110]. To overcome this peculiar result, a careful design of the contact layers in the intracavity structure is required.

引用

页码：708 / 710

页数：3

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