Design and fabrication of VCSEL's with AlxOy-GaAs DBR's

被引：52

作者：

MacDougal, MH ^{[1
]}

Dapkus, PD ^{[1
]}

Bond, AE ^{[1
]}

Lin, CK ^{[1
]}

Geske, J ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT ELECT ENGN ELECTROPHYS,LOS ANGELES,CA 90089

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 03期

关键词：

distributed Bragg reflector lasers; optical device fabrication; semiconductor growth; semiconductor heterojunctions; semiconductor lasers;

D O I：

10.1109/2944.640644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A procedure for fabricating vertical-cavity surface-emitting lasers (VCSEL's) with oxide-based distributed Bragg reflectors (DBR's) is presented. An in-depth analysis of parameters and behavior unique to oxide VCSEL's determines the device design. The development cycle time for these devices is reduced through development of a method for post-growth analysis of the epitaxial stack reflectivity before device processing. Threshold currents as low as 160 mu A and resistances as low as 80 Omega are demonstrated using different device designs. The total optical loss of low-doped oxide VCSEL structures is 0.163% which is comparable to VCSEL designs based on all-semiconductor DBR's. The thermal resistance of an 8 x 8 mu m VCSEL is measured to be 2.8 degrees C/mW, demonstrating that the presence of oxide layers does not act as a barrier to heat flow out of the active region.

引用

页码：905 / 915

页数：11

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