NATIVE-OXIDE STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS

Data are presented on the room-temperature continuous (cw) operation of native-oxide single-stripe Al(x)Ga(l)-xAs-GaAs quantum well heterostructure (QWH) lasers. The device quality native oxide is produced by the conversion of high Al composition Al(x)Ga(l)-xAs (chi-approximately 0.8) confining layers via H2O vapor oxidation (400-degrees-C) in a N2 carrier gas. The 10-mu-m-wide cw 300 K QWH lasers, which are fabricated by simplified processing, have excellent spectral quality and have been operated to powers in excess of 100 mW per facet.