NATIVE-OXIDE MASKED IMPURITY-INDUCED LAYER DISORDERING OF ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURES

被引:17
作者
DALLESASSE, JM [1 ]
HOLONYAK, N [1 ]
ELZEIN, N [1 ]
RICHARD, TA [1 ]
KISH, FA [1 ]
SUGG, AR [1 ]
BURNHAM, RD [1 ]
SMITH, SC [1 ]
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
关键词
D O I
10.1063/1.104460
中图分类号
O59 [应用物理学];
学科分类号
摘要
Data are presented showing that the native oxide that can be formed on high Al composition Al(x)Ga(1-x)As (x greater-than-or-similar-to 0.7) confining layers on Al(y)Ga(1-y)As-Al(z)Ga(1-z)As (y > z) superlattices or quantum well heterostructures serves as an effective mask against impurity diffusion (Zn or Si), and thus against impurity-induced layer disordering. The high quality native oxide is produced by the conversion of high Al composition Al(x)Ga(1-x)As (x greater-than-or-similar-to 0.7) confining layers, which can be grown on a variety of heterostructures, via H2O vapor oxidation (greater-than-or-similar-to 400-degrees-C) in an N2 carrier gas.
引用
收藏
页码:974 / 976
页数:3
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