Dielectric behavior of polyaniline synthesized by different techniques

被引:167
作者
Soares, BG
Leyva, ME
Barra, GMO
Khastgir, D
机构
[1] Univ Fed Rio de Janeiro, Macromol Inst, Ctr Tecnol, BR-21945970 Rio De Janeiro, Brazil
[2] Univ Fed Santa Catarina, Dept Mat, Florianopolis, SC, Brazil
[3] Indian Inst Technol, Ctr Rubber Technol, Kharagpur 721302, W Bengal, India
关键词
polyaniline; conductive polymer; dielectric properties;
D O I
10.1016/j.eurpolymj.2005.08.013
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Polyaniline doped with dodecylbenzenesulfonic acid (Pani.DBSA) was synthesized by different procedures: by a dedoping-redoping process, by one step inverted emulsion polymerization and by one step aqueous dispersion polymerization. The effect of these different techniques on the electric properties (dielectric constant, dielectric losses, and complex electric modulus) of the corresponding emeraldine base has been studied by thermal dielectric analyzer (DETA) in the temperature range -130 degrees C to 200 degrees C and in frequency range 0.03-10(5) Hz. It was found that the preparation technique has significant influence on the dielectric properties of Pani. The different synthetic routes give rise to polyaniline with different distribution of electric relaxation process, indicating different chain structure. Emeraldine base from Pani.DBSA prepared by one step aqueous dispersion polymerization exhibits one single relaxation peak with narrow distribution whereas that prepared by inverted emulsion polymerization exhibits two relaxation peaks, indicating two-phase structure as indicated by a bimodal distribution of relaxation process. Emeraldine base from Pani.DBSA prepared by dedoping-redoping process presents an intermediary behavior. Percentage crystallinity of Pani.DBSA samples has also been investigated using wide-angle X-ray diffraction analysis. Pani.DBSA prepared by aqueous dispersion exhibited higher crystallinity degree, which agrees with the higher conductivity. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:676 / 686
页数:11
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