Competitive CuAlS2 oxygen gas sensor

被引:11
作者
Abaab, M [1 ]
Bouazzi, AS [1 ]
Rezig, B [1 ]
机构
[1] ENIT, Lab Photovoltaique & Mat Semicond, Le Belvedere 1002, Tunisia
关键词
thin film; semiconductor gas sensor; gas adsorption;
D O I
10.1016/S0167-9317(99)00495-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
CuAlS2 thin films were deposited on glass substrates by thermal evaporation. The electrical resistivity of these films has been studied versus oxygen pressure. It is shown that this wide gap material, CuAlS2, can be a competitive oxygen gas sensor operating at room temperature. The detection mechanism of this sensor is discussed and its metrological characteristics are evaluated. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:343 / 348
页数:6
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