Modification of gold source and drain electrodes by self-assembled monolayer in staggered n- and p-channel organic thin film transistors

被引：109

作者：

Boudinet, Damien ^{[1
]}

Benwadih, Mohamed ^{[1
]}

Qi, Yabing ^{[2
]}

Altazin, Stephane ^{[1
]}

Verilhac, Jean-Marie ^{[1
]}

Kroger, Michael ^{[2
]}

Serbutoviez, Christophe ^{[1
]}

Gwoziecki, Romain ^{[1
]}

Coppard, Romain ^{[1
]}

Le Blevennec, Gilles ^{[1
]}

Kahn, Antoine ^{[2
]}

Horowitz, Gilles ^{[3
]}

机构：

[1] CEA LITEN LCI, F-38054 Grenoble, France

[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[3] Univ Paris Diderot, CNRS, UMR 7086, ITODYS, F-75205 Paris 13, France

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 02期

关键词：

Organic thin film transistors; Contact resistance; Self-assembled monolayer; Transfer line method; FIELD-EFFECT TRANSISTORS; CHARGE-CARRIER INJECTION; TRANSPORT; ENERGY; INTERFACES; METAL;

D O I：

10.1016/j.orgel.2009.10.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the effect of the deposition of self-assembled monolayers (SAMs) on the source and drain electrodes on the contact resistance and mobility in organic thin film transistors (OTFTs). Ultraviolet photoelectron spectroscopy (UPS) shows a variation of the work function of the electrodes depending on the SAM. OTFTs were fabricated with solution processible Polyera ActivInk (TM) N1400, TIPS-pentacene and TFB, giving access to both polarities of transistors and to both crystalline and amorphous materials. The transfer line method (TLM) was used to separately estimate the contact resistance and mobility. A clear correlation is found between the work function of the modified electrodes and the corresponding contact resistance. The effect on mobility is more puzzling, and tentatively attributed to morphological effects. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：227 / 237

页数：11

共 37 条

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