Influence of anthracene-2-thiol treatment on the device parameters of pentacene bottom-contact transistors

被引：40

作者：

Bock, C. ^{[1
]}

Pham, D. V.

Kunze, U.

Kaefer, D.

Witte, G.

Terfort, A.

机构：

[1] Ruhr Univ Bochum, D-44780 Bochum, Germany

[2] Univ Marburg, D-35032 Marburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 05期

关键词：

D O I：

10.1063/1.2767235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In pentacene-based bottom-contact field-effect transistors, the authors study the influence of anthracene-2-thiol-modified gold electrodes on the morphology, the contact and sheet resistance, the trap density, and the charge-carrier activation energy. The data are compared to reference samples with untreated gold electrodes. Anthracene-2-thiol treatment leads to a reduced sheet resistance, a reduced activation energy, and an improved film morphology. (c) 2007 American Institute of Physics.

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页数：3

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