Electron spin relaxation in graphene: The role of the substrate

被引:179
作者
Ertler, Christian [1 ]
Konschuh, Sergej [1 ]
Gmitra, Martin [1 ]
Fabian, Jaroslav [1 ]
机构
[1] Univ Regensburg, Inst Theoret Phys, D-93040 Regensburg, Germany
来源
PHYSICAL REVIEW B | 2009年 / 80卷 / 04期
关键词
TRANSPORT; SCATTERING;
D O I
10.1103/PhysRevB.80.041405
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Theory of the electron-spin relaxation ingraphene on the SiO2 substrate is developed. Charged impurities and polar-optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field, which leads to spin relaxation by the D'yakonov-Perel' mechanism. Analytical estimates and Monte Carlo simulations show that the corresponding spin relaxation times are between micro- to milliseconds, being only weakly temperature dependent. It is also argued that the presence of adatoms on graphene can lead to spin lifetimes shorter than nanoseconds.
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页数:4
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