Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix - Response

被引：30

作者：

Ledentsov, NN

Krestnikov, IL

Maximov, MV

Ivanov, SV

Sorokin, SL

Kopev, PS

Alferov, ZI

Bimberg, D

Torres, CMS

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

[2] BERG UNIV GESAMTHSCH WUPPERTAL,D-42097 WUPPERTAL,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 20期

关键词：

D O I：

10.1063/1.119266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：2766 / 2767

页数：2

共 8 条

[1] ENERGY-LEVELS AND EXCITON OSCILLATOR STRENGTH IN SUBMONOLAYER INAS-GAAS HETEROSTRUCTURES [J].

BELOUSOV, MV ;

LEDENTSOV, NN ;

MAXIMOV, MV ;

WANG, PD ;

YASIEVICH, IN ;

FALEEV, NN ;

KOZIN, IA ;

USTINOV, VM ;

KOPEV, PS ;

TORRES, CMS .

PHYSICAL REVIEW B, 1995, 51 (20) :14346-14351

[2] Coherently strained InAs insertions in GaAs: Do they form quantum wires and dots? [J].

Brandt, O ;

Ilg, M ;

Ploog, K .

MICROELECTRONICS JOURNAL, 1995, 26 (08) :861-870

[3] INITIAL-STAGES OF INAS EPITAXY ON VICINAL GAAS(001)-(2X4) [J].

BRESSLERHILL, V ;

LORKE, A ;

VARMA, S ;

PETROFF, PM ;

POND, K ;

WEINBERG, WH .

PHYSICAL REVIEW B, 1994, 50 (12) :8479-8487

[4]

KERN K, 1991, PHYS REV LETT, V67, P857

[5] Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix [J].

Ledentsov, NN ;

Krestnikov, IL ;

Maximov, MV ;

Ivanov, SV ;

Sorokin, SL ;

Kopev, PS ;

Alferov, ZI ;

Bimberg, D ;

Torres, CMS .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1343-1345

[6] OPTICAL SPECTROSCOPIC STUDIES OF INAS LAYER TRANSFORMATION ON GAAS-SURFACES [J].

LEDENTSOV, NN ;

WANG, PD ;

TORRES, CMS ;

EGOROV, AY ;

MAXIMOV, MV ;

USTINOV, VM ;

ZHUKOV, AE ;

KOPEV, PS .

PHYSICAL REVIEW B, 1994, 50 (16) :12171-12174

[7]

ODONNELL KP, APPL PHYS LETT

[8]

Rosenauer A, 1996, OPTIK, V102, P63

← 1 →