Coherently strained InAs insertions in GaAs: Do they form quantum wires and dots?

被引:6
作者
Brandt, O
Ilg, M
Ploog, K
机构
[1] Paul-Drude-Institut für Festkörperelektronik, D-10117 Berlin
关键词
D O I
10.1016/0026-2692(95)00047-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Coherently strained InAs insertions in a GaAs matrix are expected to exhibit 'quantum-wire-like' or 'quantum-dot-like' behavior for two regimes of InAs coverage. Firstly, when depositing submonolayer InAs films on vicinal GaAs surfaces forming regular steps, an ordered array of InAs aggregates is obtained whose lateral size is given by the step density and whose size distribution is determined by the homogeneity of the step distribution on the initial surface. Secondly, when exceeding a certain InAs coverage (similar or equal to 2 monolayers), a morphological phase transformation occurs which results in the formation of three-dimensional InAs islands having sizes compatible with the quantum-confinement of excitons. In this review, we present experimental results for InAs insertions in GaAs for both coverage regimes. Particular emphasis is put on the evaluation of the actual structural and compositional configuration of the InAs insertions in the final heterostructure. It is demonstrated that such an evaluation is stringently required for a correct interpretation of the optical properties of the structure.
引用
收藏
页码:861 / 870
页数:10
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