DIRECT SYNTHESIS OF INAS QUANTUM DOTS IN SINGLE-CRYSTALLINE GAAS MATRIX BY MOLECULAR-BEAM EPITAXY

被引：6

作者：

BRANDT, O ^{[1
]}

TAPFER, L ^{[1
]}

PLOOG, K ^{[1
]}

BIERWOLF, R ^{[1
]}

PHILLIPP, F ^{[1
]}

HOHENSTEIN, M ^{[1
]}

机构：

[1] MAX PLANCK INST MET RES,W-7000 STUTTGART 80,GERMANY

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)91121-Q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We directly synthesize InAs microclusters embedded in a single-crystalline GaAs matrix by molecular beam epitaxy. Our method is based on the deposition of fractional monolayers of InAs on terraced GaAs(001) surfaces and the subsequent overgrowth with GaAs. The growth conditions are adjusted in situ by reflection high-energy electron diffraction to favor step-flow nucleation of both Ga and In adatoms. Using X-ray diffractometry and transmission electron microscopy, we show that an array of isolated InAs clusters of subnanometer size (quantum dots) is thereby formed within the GaAs matrix.

引用

收藏

页码：204 / 208

页数：5

相关论文

共 13 条

[1] STRUCTURAL AND OPTICAL-PROPERTIES OF (100) INAS SINGLE-MONOLAYER QUANTUM-WELLS IN BULKLIKE GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BRANDT, O ;

TAPFER, L ;

CINGOLANI, R ;

PLOOG, K ;

HOHENSTEIN, M ;

PHILLIPP, F .

PHYSICAL REVIEW B, 1990, 41 (18) :12599-12606

[2] ROLE OF BROKEN TRANSLATIONAL INVARIANCE FOR THE OPTICAL-RESPONSE OF EXCITONS IN LOW-DIMENSIONAL SEMICONDUCTORS [J].

BRANDT, O ;

LAGE, H ;

LAROCCA, GC ;

HEBERLE, A ;

PLOOG, K .

SURFACE SCIENCE, 1992, 267 (1-3) :319-322

[3] ELECTRON ELECTRON AND ELECTRON-HOLE INTERACTIONS IN SMALL SEMICONDUCTOR CRYSTALLITES - THE SIZE DEPENDENCE OF THE LOWEST EXCITED ELECTRONIC STATE [J].

BRUS, LE .

JOURNAL OF CHEMICAL PHYSICS, 1984, 80 (09) :4403-4409

[4] A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF (100) GAAS VICINAL SURFACES [J].

CHALMERS, SA ;

GOSSARD, AC ;

PETROFF, PM ;

GAINES, JM ;

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1357-1362

[5] INSITU MONITORING OF STEP ARRAYS ON VICINAL SILICON (100) SURFACES FOR HETEROEPITAXY [J].

CROOK, GE ;

DAWERITZ, L ;

PLOOG, K .

PHYSICAL REVIEW B, 1990, 42 (08) :5126-5134

[6] EVOLUTION OF TERRACE SIZE DISTRIBUTIONS DURING THIN-FILM GROWTH BY STEP-MEDIATED EPITAXY [J].

GOSSMANN, HJ ;

SINDEN, FW ;

FELDMAN, LC .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) :745-752

[7] OPTICAL-PROPERTIES OF III-V SEMICONDUCTOR QUANTUM WIRES AND DOTS [J].

KASH, K .

JOURNAL OF LUMINESCENCE, 1990, 46 (02) :69-82

[8]

MILLER MS, 1991, 6TH P INTC MOL BEAM, V111, P323

[9] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J].

NEAVE, JH ;

DOBSON, PJ ;

JOYCE, BA ;

ZHANG, J .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :100-102

[10] STRUCTURE OF ALAS-GAAS INTERFACES GROWN ON (100) VICINAL SURFACES BY MOLECULAR-BEAM EPITAXY [J].

PETROFF, PM ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :620-622