An electrically injected InAs/GaAs quantum-dot photonic crystal microcavity light-emitting diode

被引：31

作者：

Sabarinathan, J ^{[1
]}

Bhattacharya, P

Yu, PC

Krishna, S

Cheng, J

Steel, DG

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Harrison M Randall Lab Phys, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 20期

关键词：

D O I：

10.1063/1.1521249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An electrically injected InAs/GaAs self-organized quantum-dot photonic crystal microcavity light-emitting diode operating at 1.04 mum is demonstrated. Light-current characteristics are obtained for devices with two- and five-defect period cavities with maximum light output of 0.17 muW measured in the surface-normal direction. Near-field images were also obtained for an injection current of 8.35 mA, showing light confinement within a few periods of the photonic crystal defect microcavity. (C) 2002 American Institute of Physics.

引用

页码：3876 / 3878

页数：3

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