Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing

被引：80

作者：

Hsu, TM ^{[1
]}

Lan, YS

Chang, WH

Yeh, NT

Chyi, JI

机构：

[1] Natl Cent Univ, Dept Phys, Chungli 32054, Taiwan

[2] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.125863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the photoluminescence spectra of rapid-thermal-annealed self-assembled InAs quantum dots at 10 K. For annealing temperatures ranging from 700 to 950 degrees C, we observed a blueshift in the interband transition energies, a decrease in the intersublevel spacing energies, and a narrowing of photoluminescence linewidths. In this letter, we demonstrate that the tuning of the InAs quantum dots interband transition and intersublevel spacing energies can be achieved by 30 s of rapid thermal annealing. The relation between interband transition energy changes and the intersublevel spacing energies is found to be linear, with a slope close to the ratio of the dots' height to their diameter. (C) 2000 American Institute of Physics. [S0003- 6951(00)00406-X].

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页码：691 / 693

页数：3

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