Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots

被引:86
作者
Liao, XZ [1 ]
Zou, J
Cockayne, DJH
Leon, R
Lobo, C
机构
[1] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia
[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[3] Australian Natl Univ, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
关键词
D O I
10.1103/PhysRevLett.82.5148
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Significant differences in the image features of InxGa1-xAs quantum dots (QDs) grown on (001) and vicinal (001) GaAs were seen in [001] on-zone bright-held transmission electron microscope images. Simulated images were obtained by modeling the strain field distribution of the QDs with finite element analysis and then using this model in dynamical electron diffraction contrast simulations. Comparison of the experimental images and the simulated images shows that (i) In segregation exists in the QDs and (ii) the average In content of the QDs is higher than the average In content of the film.
引用
收藏
页码:5148 / 5151
页数:4
相关论文
共 20 条
  • [1] Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy
    Benabbas, T
    Francois, P
    Androussi, Y
    Lefebvre, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (05) : 2763 - 2767
  • [2] Blakemore J. S., 1982, J APPL PHYS, V52, p123(R)
  • [3] STRAINED STATE OF GE(SI) ISLANDS ON SI - FINITE-ELEMENT CALCULATIONS AND COMPARISON TO CONVERGENT-BEAM ELECTRON-DIFFRACTION MEASUREMENTS
    CHRISTIANSEN, S
    ALBRECHT, M
    STRUNK, HP
    MAIER, HJ
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (26) : 3617 - 3619
  • [4] Equilibrium phase diagrams for dislocation free self-assembled quantum dots
    Daruka, I
    Barabasi, AL
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (17) : 2102 - 2104
  • [5] Dislocation-free island formation in heteroepitaxial growth: A study at equilibrium
    Daruka, I
    Barabasi, AL
    [J]. PHYSICAL REVIEW LETTERS, 1997, 79 (19) : 3708 - 3711
  • [6] KINETIC-MODEL OF ELEMENT-III SEGREGATION DURING MOLECULAR-BEAM EPITAXY OF III-III'-IV-SEMICONDUCTOR COMPOUNDS
    DEHAESE, O
    WALLART, X
    MOLLOT, F
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (01) : 52 - 54
  • [7] COHERENT ISLANDS AND MICROSTRUCTURAL EVOLUTION
    DRUCKER, J
    [J]. PHYSICAL REVIEW B, 1993, 48 (24): : 18203 - 18206
  • [8] SCATTERING OF FAST ELECTRONS BY CRYSTALS
    HUMPHREYS, CJ
    [J]. REPORTS ON PROGRESS IN PHYSICS, 1979, 42 (11) : 1825 - &
  • [9] Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study
    Jiang, HT
    Singh, J
    [J]. PHYSICAL REVIEW B, 1997, 56 (08) : 4696 - 4701
  • [10] Stable and metastable InGaAs/GaAs island shapes and surfactantlike suppression of the wetting transformation
    Leon, R
    Lobo, C
    Zou, J
    Romeo, T
    Cockayne, DJH
    [J]. PHYSICAL REVIEW LETTERS, 1998, 81 (12) : 2486 - 2489