Dislocation-free island formation in heteroepitaxial growth: A study at equilibrium

被引：299

作者：

Daruka, I

Barabasi, AL

机构：

[1] Department of Physics, University of Notre Dame, Notre Dame, IN

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.79.3708

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate the equilibrium properties of strained heteroepitaxial systems, incorporating the formation and the growth of a wetting film, dislocation-free island formation, and ripening. The derived phase diagram provides a detailed characterization of the possible growth modes in terms of the island density, equilibrium island size, and wetting layer thickness. Comparing our predictions with experimental results we discuss the growth conditions that can lead to stable islands as well as ripening. [S0031-9007(97)04531-6].

引用

页码：3708 / 3711

页数：4

共 19 条

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