Island formation and critical thickness in heteroepitaxy

被引：11

作者：

Daruka, I

Barabasi, AL

机构：

[1] University of Notre Dame, Department of Physics, Notre Dame, IN

来源：

关键词：

GROWTH;

D O I：

10.1103/PhysRevLett.78.3027

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：3027 / 3027

页数：1

共 10 条

[1] CRITICAL CLUSTER-SIZE - ISLAND MORPHOLOGY AND SIZE DISTRIBUTION IN SUBMONOLAYER EPITAXIAL-GROWTH
AMAR, JG
FAMILY, F
[J]. PHYSICAL REVIEW LETTERS, 1995, 74 (11) : 2066 - 2069
[2] [Anonymous], 1995, Fractal Concepts in Surface Growth, DOI [10.1017/CBO9780511599798, DOI 10.1017/CBO9780511599798]
[3] SCALING ANALYSIS OF DIFFUSION-MEDIATED ISLAND GROWTH IN SURFACE-ADSORPTION PROCESSES
BARTELT, MC
EVANS, JW
[J]. PHYSICAL REVIEW B, 1992, 46 (19): : 12675 - 12687
[4] Structural transition in large-lattice-mismatch heteroepitaxy
Chen, Y
Washburn, J
[J]. PHYSICAL REVIEW LETTERS, 1996, 77 (19) : 4046 - 4049
[5] DARUKA I, IN PRESS
[6] GERARD JM, 1995, CONFINED ELECT PHOTO
[7] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS
LEONARD, D
POND, K
PETROFF, PM
[J]. PHYSICAL REVIEW B, 1994, 50 (16): : 11687 - 11692
[8] MILLER MS, 1996, UNPUB SOLID STATE EL, V40, P609
[9] GROWTH OF GERMANIUM FILMS ON SI(001) SUBSTRATES
ROLAND, C
GILMER, GH
[J]. PHYSICAL REVIEW B, 1993, 47 (24): : 16286 - 16298
[10] TESOFF J, 1991, PHYS REV B, V43, P9377