Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study

被引:283
作者
Jiang, HT
Singh, J
机构
[1] Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor
关键词
D O I
10.1103/PhysRevB.56.4696
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Strained epitaxy has been shown to produce pyramidal-shaped quantum dot structures by single-step epitaxy. In this paper we examine the strain tensor in these quantum dots using a valence force field model. We use an eight-band k.p formalism to find the electronic spectra in the highly strained dots. Results obtained for the conduction-band spectra using the effective-mass approach are shown to have serious errors. This is particularly true for excited states in the conduction band. The dependence of the electronic spectra on the quantum dot size and shape is also reported alone with comparisons with published experimental results.
引用
收藏
页码:4696 / 4701
页数:6
相关论文
共 25 条
  • [1] Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots
    Adler, F
    Geiger, M
    Bauknecht, A
    Scholz, F
    Schweizer, H
    Pilkuhn, MH
    Ohnesorge, B
    Forchel, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) : 4019 - 4026
  • [2] Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy
    Benabbas, T
    Francois, P
    Androussi, Y
    Lefebvre, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (05) : 2763 - 2767
  • [3] IS THERE AN ELASTIC ANOMALY FOR A (001) MONOLAYER OF INAS EMBEDDED IN GAAS
    BERNARD, JE
    ZUNGER, A
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (02) : 165 - 167
  • [4] Bir GL., 1974, Symmetry and Strain-Induced Effects in Semiconductors
  • [5] Electronic structure of InAs/GaAs self-assembled quantum dots
    Cusack, MA
    Briddon, PR
    Jaros, M
    [J]. PHYSICAL REVIEW B, 1996, 54 (04) : R2300 - R2303
  • [7] INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE
    GRUNDMANN, M
    STIER, O
    BIMBERG, D
    [J]. PHYSICAL REVIEW B, 1995, 52 (16) : 11969 - 11981
  • [8] ULTRANARROW LUMINESCENCE LINES FROM SINGLE QUANTUM DOTS
    GRUNDMANN, M
    CHRISTEN, J
    LEDENTSOV, NN
    BOHRER, J
    BIMBERG, D
    RUVIMOV, SS
    WERNER, P
    RICHTER, U
    GOSELE, U
    HEYDENREICH, J
    USTINOV, VM
    EGOROV, AY
    ZHUKOV, AE
    KOPEV, PS
    ALFEROV, ZI
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (20) : 4043 - 4046
  • [9] Grundmann M, 1996, APPL PHYS LETT, V68, P979, DOI 10.1063/1.116118
  • [10] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE
    KEATING, PN
    [J]. PHYSICAL REVIEW, 1966, 145 (02): : 637 - &