Electronic structure of InAs/GaAs self-assembled quantum dots

被引：367

作者：

Cusack, MA

Briddon, PR

Jaros, M

机构：

[1] Department of Physics, The University of Newcastle upon Tyne, Newcastle upon Tyne

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.54.R2300

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic properties of the self-assembled InAs/GaAs quantum dots are investigated theoretically. In our calculation the microscopic distribution of the strain, valence-band mixing, and the shape of the conduction band of InAs with strain are fully taken into account. New states are brought to light and their status in the framework of established approximate models of the electronic structure is critically examined.

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页码：R2300 / R2303

页数：4

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