CALCULATION OF THE ENERGY-LEVELS IN INAS/GAAS QUANTUM DOTS

被引：232

作者：

MARZIN, JY ^{[1
]}

BASTARD, G ^{[1
]}

机构：

[1] ECOLE NORMALE SUPER, PHYS MAT CONDENSEE LAB, F-75005 PARIS, FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 92卷 / 05期

关键词：

A; SEMICONDUCTORS; NANOSTRUCTURES; D; ELECTRONIC STRUCTURE; OPTICAL PROPERTIES;

D O I：

10.1016/0038-1098(94)90524-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present a detailed effective mass calculation of the energy levels,in InAs quantum dots embedded in GaAs. We compare the results of a separable approximate treatment with a more complete numerical approach. A satisfying;agreement is found with the available experimental data. Even for dot diameters of the order of 30 nm, we find large- distances between consecutive energy-levels, which should play an important role in the energy relaxation rates.

引用

页码：437 / 442

页数：6

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