ELECTRON RELAXATION IN QUANTUM DOTS BY MEANS OF AUGER PROCESSES

被引:322
作者
BOCKELMANN, U
EGELER, T
机构
[1] Walter Schottky Institut, Technische Universität München, D-8046 Garching, Am Coulombwall
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 23期
关键词
D O I
10.1103/PhysRevB.46.15574
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The present theoretical work deals with the relaxation of hot electrons in quantum dots by Coulomb scattering with an electron-hole plasma. A random-phase approximation is used which includes single-particle and collective-plasma excitations. We discuss the influence of the dot size, plasma density, and temperature. The resulting transition rates are of the order of 10(12) s-1 for a plasma density of 10(15) m-2 in In0.53Ga0.47As/InP. In the presence of a dense electron-hole plasma, hot electrons can relax efficiently by Auger processes, even in small semiconductor quantum dots where the relaxation by phonon scattering is weak.
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页码:15574 / 15577
页数:4
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