EXCITON RELAXATION AND RADIATIVE RECOMBINATION IN SEMICONDUCTOR QUANTUM DOTS

被引：181

作者：

BOCKELMANN, U

机构：

[1] Walter Schottky Institut, Technische Universitat Munchen, D-85748 Garching, Am Coulombwall

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.48.17637

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Radiative lifetimes and acoustic-phonon scattering times of near-band-gap excitons are calculated. With increasing spatial quantization, exciton relaxation by phonon emission decreases strongly in efficiency as compared to radiative recombination. A rate-equation analysis based on the calculated lifetimes indicates an increasing shift of the luminescence from the exciton ground state towards excited states. For typical parameters of dots fabricated from quantum wells the calculated total luminescence efficiency is not strongly reduced by the effect of a slowed relaxation. The luminescence from the ground state becomes weak for strong spatial quantization.

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页码：17637 / 17640

页数：4

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