STRAINED STATE OF GE(SI) ISLANDS ON SI - FINITE-ELEMENT CALCULATIONS AND COMPARISON TO CONVERGENT-BEAM ELECTRON-DIFFRACTION MEASUREMENTS

被引：182

作者：

CHRISTIANSEN, S ^{[1
]}

ALBRECHT, M ^{[1
]}

STRUNK, HP ^{[1
]}

MAIER, HJ ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH ALLGEMEINE WERKSTOFFEIGENSCHAFTEN,D-91058 ERLANGEN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 26期

关键词：

D O I：

10.1063/1.111217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we present calculations by three-dimensional finite element method and measurements by convergent beam electron diffraction of the displacement field resulting from misfitting Ge0.85Si0.25 islands on Si(001). A good agreement between the results of both methods indicates that the three-dimensional finite element method is a reliable tool to calculate the strain, and thus the stress field, in such nanostructures. As a result both methods show that the substrate substantially takes part in the elastic relaxation process in such heteroepitaxial systems.

引用

页码：3617 / 3619

页数：3

共 19 条

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