DIMENSIONALITY AND CRITICAL SIZES OF GESI ON SI(100)

被引：37

作者：

HANSSON, PO ^{[1
]}

ALBRECHT, M ^{[1
]}

STRUNK, HP ^{[1
]}

BAUSER, E ^{[1
]}

WERNER, JH ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH,W-8520 ERLANGEN,GERMANY

来源：

THIN SOLID FILMS | 1992年 / 216卷 / 02期

关键词：

D O I：

10.1016/0040-6090(92)90837-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pseudomorphic heteroepitaxy close to equilibrium is investigated by transmission electron microscopy for GexSi1-x, grown on Si(100) by liquid phase epitaxy. A transition from two-dimensional to island growth (i.e. Stranski-Krastanov growth) at a thickness of h(i) - 1.2 nm (8 monolayers), is observed, which quantitatively validates theoretical assessments of Bauer [5] and Tersoff [8], based on assumptions of equilibrium. Results suggest that the true equilibrium phase of Stranski Krastanov growth involves pseudomorphic islands. exclusively bound by {111} side facets. The critical island thickness h(c.I) = 30 nm exceeds predictions by a factor of two. supporting arguments of a kinetic barrier in the formation of the first misfit dislocation.

引用

页码：199 / 202

页数：4

共 24 条

[1]

ALBRECHT M, 1991, POLYCRYSTALLINE SEMI, V54, P503

[2]

ALBRECHT M, IN PRESS MAT RES SOC

[3]

[Anonymous], 1938, ABHANDLUNGEN AK B MN

[4] LOW-ANGLE X-RAY REFLECTION STUDY OF ULTRATHIN GE FILMS ON (100) SI [J].

BARIBEAU, JM .

APPLIED PHYSICS LETTERS, 1990, 57 (17) :1748-1750

[5] STRUCTURE AND GROWTH OF CRYSTALLINE SUPERLATTICES - FROM MONOLAYER TO SUPERLATTICE [J].

BAUER, E ;

VANDERMERWE, JH .

PHYSICAL REVIEW B, 1986, 33 (06) :3657-3671

[6]

Bauer E., 1958, Z KRISTALLOGR, V110, P372, DOI DOI 10.1524/ZKRI.1958.110.1-6.372

[7] ELASTIC STRAIN AT PSEUDOMORPHIC SEMICONDUCTOR HETEROJUNCTIONS STUDIED BY X-RAY PHOTOELECTRON DIFFRACTION - GE/SI(001) AND SI/GE(001) [J].

CHAMBERS, SA ;

LOEBS, VA .

PHYSICAL REVIEW B, 1990, 42 (08) :5109-5116

[8] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[9] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J].

FRANK, FC ;

VANDERMERWE, JH .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :216-225

[10] THE INFLUENCE OF RECONSTRUCTION ON EPITAXIAL-GROWTH - GE ON SI(100)-2X1) AND SI(111)-(7X7) [J].

GOSSMANN, HJ ;

FELDMAN, LC ;

GIBSON, WM .

SURFACE SCIENCE, 1985, 155 (2-3) :413-431

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