DIMENSIONALITY AND CRITICAL SIZES OF GESI ON SI(100)

被引：37

作者：

HANSSON, PO ^{[1
]}

ALBRECHT, M ^{[1
]}

STRUNK, HP ^{[1
]}

BAUSER, E ^{[1
]}

WERNER, JH ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH,W-8520 ERLANGEN,GERMANY

来源：

THIN SOLID FILMS | 1992年 / 216卷 / 02期

关键词：

D O I：

10.1016/0040-6090(92)90837-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pseudomorphic heteroepitaxy close to equilibrium is investigated by transmission electron microscopy for GexSi1-x, grown on Si(100) by liquid phase epitaxy. A transition from two-dimensional to island growth (i.e. Stranski-Krastanov growth) at a thickness of h(i) - 1.2 nm (8 monolayers), is observed, which quantitatively validates theoretical assessments of Bauer [5] and Tersoff [8], based on assumptions of equilibrium. Results suggest that the true equilibrium phase of Stranski Krastanov growth involves pseudomorphic islands. exclusively bound by {111} side facets. The critical island thickness h(c.I) = 30 nm exceeds predictions by a factor of two. supporting arguments of a kinetic barrier in the formation of the first misfit dislocation.

引用

页码：199 / 202

页数：4

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