Intermixing induced changes in the radiative emission from III-V quantum dots

被引：58

作者：

Lobo, C ^{[1
]}

Leon, R

Fafard, S

Piva, PG

机构：

[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 22期

关键词：

D O I：

10.1063/1.121478

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have examined the effect of thermally induced interdiffusion on the luminescence emission from red and infrared emitting self-assembled III-V quantum dots. Three different combinations of dot/barrier materials have been investigated: InAlAs/AlGaAs, InGaAs/AlGaAs and InGaAs/GaAs. In all cases, thermal intermixing was found to result in significant blueshifts of the photoluminescence (PL) emission. in addition, narrowing of the linewidth of the inhomogeneously broadened PL peak was observed, Both effects were found to be strongly dependent on the material system and average dot size. InAlAs/AlGaAs quantum dots exhibited the greatest linewidth reduction after intermixing, indicating this to be a promising method of achieving narrower luminescence lines for devices such as red-emitting zero-dimensional lasers. (C) 1998 American Institute of Physics.

引用

页码：2850 / 2852

页数：3

共 17 条

[1] Red-emitting semiconductor quantum dot lasers [J].

Fafard, S ;

Hinzer, K ;

Raymond, S ;

Dion, M ;

McCaffrey, J ;

Feng, Y ;

Charbonneau, S .

SCIENCE, 1996, 274 (5291) :1350-1353

[2]

FAFARD S, UNPUB

[3] INTERDIFFUSION IN INGAAS/GAAS QUANTUM-WELL STRUCTURES AS A FUNCTION OF DEPTH [J].

GILLIN, WP ;

DUNSTAN, DJ ;

HOMEWOOD, KP ;

HOWARD, LK ;

SEALY, BJ .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) :3782-3786

[4] EFFECTS OF DIELECTRIC ENCAPSULATION AND AS OVERPRESSURE ON AL-GA INTERDIFFUSION IN ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J].

GUIDO, LJ ;

HOLONYAK, N ;

HSIEH, KC ;

KALISKI, RW ;

PLANO, WE ;

BURNHAM, RD ;

THORNTON, RL ;

EPLER, JE ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1372-1379

[5] NANOSCALE INP ISLANDS EMBEDDED IN INGAP [J].

KURTENBACH, A ;

EBERL, K ;

SHITARA, T .

APPLIED PHYSICS LETTERS, 1995, 66 (03) :361-363

[6] SPATIALLY-RESOLVED VISIBLE LUMINESCENCE OF SELF-ASSEMBLED SEMICONDUCTOR QUANTUM DOTS [J].

LEON, R ;

PETROFF, PM ;

LEONARD, D ;

FAFARD, S .

SCIENCE, 1995, 267 (5206) :1966-1968

[7] Diffusivity transients and radiative recombination in intermixed In0.5Ga0.5As/GaAs quantum structures [J].

Leon, R ;

Williams, DRM ;

Krueger, J ;

Weber, ER ;

Melloch, MR .

PHYSICAL REVIEW B, 1997, 56 (08) :R4336-R4339

[8] Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots [J].

Leon, R ;

Kim, Y ;

Jagadish, C ;

Gal, M ;

Zou, J ;

Cockayne, DJH .

APPLIED PHYSICS LETTERS, 1996, 69 (13) :1888-1890

[9] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[10] INTERDIFFUSION OF THE GROUP-III SUBLATTICE IN IN-GA-AS-P IN-GA-AS-P AND IN-GA-AS IN-GA-AS HETEROSTRUCTURES [J].

RAO, SS ;

GILLIN, WP ;

HOMEWOOD, KP .

PHYSICAL REVIEW B, 1994, 50 (11) :8071-8073

← 1 2 →